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| very low capacitance. extremely low minority carrier lifetime. low reverse leakage. power dissipation p d =225mw. designed primarily for uhf and vhf detector applications. type no. marking package code MMBD452 5n sot-23 maximum rating @ ta=25 unless otherwise specified parameter symbol limits unit continuous reverse voltage v r 30 v power dissipation p d 225 mw operating junction temperature range t j -55 to+125 junction and storage temperature t stg -55 to+150 electrical characteristics @ ta=25 unless otherwise specified parameter symbol min. typ. max. unit conditions reverse breakdown voltage v (br) 30 v i r =10 a forward voltage v f 0.38 0.52 0.45 0.6 v i f =1.0ma i f =10ma reverse current i r 13 200 na v r =25v total capacitanc c t 0.9 1.5 pf v r =15v,f=1mhz MMBD452 dual hot carrier mixer diodes features applications ordering information dimensions in inches and (millimeters) sot-23 ? ? ? ? ? http://www.luguang.cn mail:lge@luguang.cn
typical characteristics @ ta=25 unless otherwise specified MMBD452 dual hot carrier mixer diodes http://www.luguang.cn mail:lge@luguang.cn |
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